{"content-origin" "https://www.ctcms.nist.gov/potentials/entry/1990--Tersoff-J--Si-C/"
 "contributor-id" "4ad03136-ed7f-4316-b586-1e94ccceb311"
 "description" "This is a parameterization of the Tersoff three-body potential for SiC focused on studying C interstitials in bulk Si. It has a sharp cutoff not suited for unconstrained simulations."
 "developer" ["aff409ad-1c1f-4fc6-9f5d-1762d013b915"]
 "doi" "10.25950/653e6833"
 "domain" "openkim.org"
 "executables" []
 "extended-id" "Tersoff_LAMMPS_Tersoff_1990_SiC__MO_444207127575_000"
 "kim-api-version" "2.2"
 "maintainer-id" "4ad03136-ed7f-4316-b586-1e94ccceb311"
 "model-driver" "Tersoff_LAMMPS__MD_077075034781_005"
 "potential-type" "tersoff"
 "publication-year" "2022"
 "source-citations" [{"author" "Tersoff, J."
                      "doi" "10.1103/PhysRevLett.64.1757"
                      "issue" "15"
                      "journal" "Phys. Rev. Lett."
                      "month" "apr"
                      "numpages" "0"
                      "pages" "1757--1760"
                      "publisher" "American Physical Society"
                      "recordkey" "MO_444207127575_000a"
                      "recordprimary" "recordprimary"
                      "recordtype" "article"
                      "title" "Carbon defects and defect reactions in silicon"
                      "url" "https://link.aps.org/doi/10.1103/PhysRevLett.64.1757"
                      "volume" "64"
                      "year" "1990"}]
 "species" ["C" "Si"]
 "title" "Tersoff-style three-body potential for SiC developed by Tersoff (1990) v000"}