{"creator" "Daniel Karls"
 "contributor-id" "4d62befd-21c4-42b8-a472-86132e6591f3"
 "description" "This Model contains parameters for the EDIP three-body bond-order potential for pure silicon, as given in J. F. Justo, M. Z. Bazant, E. Kaxiras, V. V. Bulatov, and S. Yip, Phys. Rev. B 58, 2539 (1998).  This is a general purpose potential for studying a wide array of bulk structures and defects in silicon."
 "disclaimer" ""
 "domain" "openkim.org"
 "extended-id" "EDIP_BOP_Bazant_Kaxiras_Si__MO_958932894036_001"
 "kim-api-version" "1.6"
 "maintainer-id" "4d62befd-21c4-42b8-a472-86132e6591f3"
 "model-driver" "EDIP_BOP_C__MD_506186535567_001"
 "publication-year" "2014"
 "source-citations" [{"author" "Justo, Jo{\\~a}o F. and Bazant, Martin Z. and Kaxiras, Efthimios and Bulatov, V. V. and Yip, Sidney"
                      "doi" "10.1103/PhysRevB.58.2539"
                      "issue" "5"
                      "journal" "Physical Review B"
                      "month" "Aug"
                      "pages" "2539--2550"
                      "publisher" "American Physical Society"
                      "recordkey" "MO_958932894036_001a"
                      "recordtype" "article"
                      "title" "Interatomic potential for silicon defects and disordered phases"
                      "volume" "58"
                      "year" "1998"}]
 "species" ["Si"]
 "title" "Original EDIP potential for elemental silicon."}