Title
A single sentence description.
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MEAM Potential for the Si-C system developed by Kang et al. (2014) v002 |
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Description
A short description of the Model describing its key features including for example: type of model (pair potential, 3-body potential, EAM, etc.), modeled species (Ac, Ag, ..., Zr), intended purpose, origin, and so on.
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A semi-empirical interatomic potential of the Si-C system is developed using a modified embedded-atom method (MEAM) formalism including second-nearest-neighbor interactions. |
Species
The supported atomic species.
| C, Si |
Disclaimer
A statement of applicability provided by the contributor, informing users of the intended use of this KIM Item.
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None |
Content Origin | http://cmse.postech.ac.kr/home_2nnmeam |
Contributor |
Hyo-Sun Jang |
Maintainer |
Hyo-Sun Jang |
Developer |
Kyung-Han Kang Taihee Eun Myong-Chul Jun Byeong-Joo Lee |
Published on KIM | 2023 |
How to Cite |
This Model originally published in [1] is archived in OpenKIM [2-5]. [1] Kang K-H, Eun T, Jun M-C, Lee B-J. Governing factors for the formation of 4H or 6H–SiC polytype during SiC crystal growth: An atomistic computational approach. Journal of crystal growth. 2014;389:120–33. doi:10.1016/j.jcrysgro.2013.12.007 — (Primary Source) A primary source is a reference directly related to the item documenting its development, as opposed to other sources that are provided as background information. [2] Kang K-H, Eun T, Jun M-C, Lee B-J. MEAM Potential for the Si-C system developed by Kang et al. (2014) v002. OpenKIM; 2023. doi:10.25950/9a23357a [3] Afshar Y, Hütter S, Rudd RE, Stukowski A, Tipton WW, Trinkle DR, et al. The modified embedded atom method (MEAM) potential v002. OpenKIM; 2023. doi:10.25950/ee5eba52 [4] Tadmor EB, Elliott RS, Sethna JP, Miller RE, Becker CA. The potential of atomistic simulations and the Knowledgebase of Interatomic Models. JOM. 2011;63(7):17. doi:10.1007/s11837-011-0102-6 [5] Elliott RS, Tadmor EB. Knowledgebase of Interatomic Models (KIM) Application Programming Interface (API). OpenKIM; 2011. doi:10.25950/ff8f563a Click here to download the above citation in BibTeX format. |
Citations
This panel presents information regarding the papers that have cited the interatomic potential (IP) whose page you are on. The OpenKIM machine learning based Deep Citation framework is used to determine whether the citing article actually used the IP in computations (denoted by "USED") or only provides it as a background citation (denoted by "NOT USED"). For more details on Deep Citation and how to work with this panel, click the documentation link at the top of the panel. The word cloud to the right is generated from the abstracts of IP principle source(s) (given below in "How to Cite") and the citing articles that were determined to have used the IP in order to provide users with a quick sense of the types of physical phenomena to which this IP is applied. The bar chart shows the number of articles that cited the IP per year. Each bar is divided into green (articles that USED the IP) and blue (articles that did NOT USE the IP). Users are encouraged to correct Deep Citation errors in determination by clicking the speech icon next to a citing article and providing updated information. This will be integrated into the next Deep Citation learning cycle, which occurs on a regular basis. OpenKIM acknowledges the support of the Allen Institute for AI through the Semantic Scholar project for providing citation information and full text of articles when available, which are used to train the Deep Citation ML algorithm. |
This panel provides information on past usage of this interatomic potential (IP) powered by the OpenKIM Deep Citation framework. The word cloud indicates typical applications of the potential. The bar chart shows citations per year of this IP (bars are divided into articles that used the IP (green) and those that did not (blue)). The complete list of articles that cited this IP is provided below along with the Deep Citation determination on usage. See the Deep Citation documentation for more information. ![]() 27 Citations (20 used)
Help us to determine which of the papers that cite this potential actually used it to perform calculations. If you know, click the .
USED (low confidence) F. Zuo et al., “Enhancing densification rate and the unusual 4H-SiC polytype stabilization in Ultrafast High-temperature Sintering of α-SiC,” Journal of the European Ceramic Society. 2023. link Times cited: 0 USED (low confidence) Y. Huang, Y. Zhou, J. Li, and F. Zhu, “Understanding the role of surface mechanical properties in SiC surface machining,” Materials Science in Semiconductor Processing. 2023. link Times cited: 0 USED (low confidence) N. Guo et al., “Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps,” Crystals. 2023. link Times cited: 1 Abstract: In this study, we used a horizontal hot-wall CVD epitaxy app… read more USED (low confidence) O. Klimanova, T. Miryashkin, and A. Shapeev, “Accurate melting point prediction through autonomous physics-informed learning,” Physical Review B. 2023. link Times cited: 0 Abstract: We present an algorithm for computing melting points by auto… read more USED (low confidence) Y. Liu et al., “Deep learning inter-atomic potential for irradiation damage in 3C-SiC,” Computational Materials Science. 2023. link Times cited: 0 USED (low confidence) K. Wu et al., “Vapor Deposition Growth of Sic Crystal on 4h-Sic Substrate by Molecular Dynamics Simulation,” SSRN Electronic Journal. 2023. link Times cited: 1 Abstract: Due to the lack of appropriate experimental methods for imag… read more USED (low confidence) S. Gowthaman, “Impact of Atomic Void Clusters on the Tensile Behavior and its Features of Silicon Carbide Polycrystal through Molecular Dynamics Analysis,” Silicon. 2023. link Times cited: 1 USED (low confidence) N. Wu, P. Jiang, H. Zhang, X. Feng, and Q. Zheng, “Influence of nano-indentation depth on the elastic–plastic transformation of 6H-SiC simulated,” AIP Advances. 2023. link Times cited: 0 Abstract: To investigate the effect of nano-indentation depth on the e… read more USED (low confidence) S. Stelmakh, K. Skrobas, K. Stefanska-Skrobas, S. Gierlotka, and B. Palosz, “Distortion of SiC lattice induced by carbon-coating on (100) and (111) surfaces - ab-initio and molecular dynamics study,” Surface Science. 2022. link Times cited: 1 USED (low confidence) T. Chen, L. Dong, J. Yi, X. Ning, W. Li, and N. Wu, “Effect of Nanoindentation Temperature on Plastic Deformation of 3C-SiC Based on the Molecular Dynamics Method,” Journal of Nanomaterials. 2022. link Times cited: 0 Abstract: To explore the effect of nanoindentation temperature on the … read more USED (low confidence) S. Gowthaman, T. Jagadeesha, and V. Dhinakaran, “Influence of Creep Conditions and Grain Size on the Creep Behavior of Nano-Twinned Silicon Carbide Polycrystal: A Molecular Dynamics Study,” Silicon. 2022. link Times cited: 1 USED (low confidence) W. Lin et al., “Comparison of Vibration-Assisted Scratch Characteristics of SiC Polytypes (3C-, 4H- and 6H-SiC),” Micromachines. 2022. link Times cited: 5 Abstract: Single-crystal silicon carbide (SiC) is widely used because … read more USED (low confidence) K. Racka-Szmidt, E. Tymicki, M. Raczkiewicz, J. Sar, T. Wejrzanowski, and K. Grasza, “Effect of Cerium Impurity on the Stable Growth of the 4H-SiC Polytype by the Physical Vapour Transport Method,” Journal of Crystal Growth. 2022. link Times cited: 1 USED (low confidence) T. Wei and K. Dejun, “Effect of Laser-Clad NiCrAl-SiC Coatings on Friction-Wear Performance of AISI H13 Steel at High Temperature,” Journal of Materials Engineering and Performance. 2022. link Times cited: 3 USED (low confidence) S. Gowthaman, T. Jagadeesha, and V. Dhinakaran, “A Study on the Point Defect Effects on the Monolithic Silicon Carbide Tensile Features: A Molecular Dynamics Study,” Silicon. 2022. link Times cited: 2 USED (low confidence) Z. A. Yaşar, V. Delucca, and R. Haber, “Effect of carbon source on the properties of dense α-SiC,” Materials Research Express. 2021. link Times cited: 1 Abstract: Due to its outstanding properties, SiC is a candidate materi… read more USED (low confidence) X. Chen, H. Zhao, and W. Ai, “Study on the competitive growth mechanism of SiC polytypes using Kinetic Monte Carlo method,” Journal of Crystal Growth. 2021. link Times cited: 3 USED (low confidence) F. Miranda et al., “High-velocity plasma spray process using hybrid SiO2 + ZrO2 precursor for deposition of environmental barrier coatings,” Surface & Coatings Technology. 2020. link Times cited: 4 USED (low confidence) C. Wu, T. Gao, J. Nie, and X. Liu, “Synthesis and Growth of 6H-SiC and 3C-SiC in an Al–Si–C System at 820 °C: Effect of the Reaction Path on the SiC Polytype,” Crystal Growth & Design. 2020. link Times cited: 6 Abstract: Many of the properties of SiC are decided by the polytype. I… read more USED (low confidence) F. Kong et al., “A large-scale simulation method on complex ternary Li–Mn–O compounds for Li-ion battery cathode materials,” Computational Materials Science. 2016. link Times cited: 12 NOT USED (low confidence) A.-C. Liu, Y.-Y. Lai, H. Chen, A.-P. Chiu, and H.-C. Kuo, “A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap,” Micromachines. 2023. link Times cited: 2 Abstract: In this paper, we will discuss the rapid progress of third-g… read more NOT USED (high confidence) Y. Xie, J. Vandermause, S. Ramakers, N. Protik, A. Johansson, and B. Kozinsky, “Uncertainty-aware molecular dynamics from Bayesian active learning for phase transformations and thermal transport in SiC,” npj Computational Materials. 2022. link Times cited: 14 NOT USED (high confidence) S. Ramakers et al., “Effects of thermal, elastic, and surface properties on the stability of SiC polytypes,” Physical Review B. 2022. link Times cited: 6 Abstract: SiC polytypes have been studied for decades, both experiment… read more NOT USED (high confidence) J. M. Ortiz-Roldán, F. Montero-Chacón, E. Garcia-Perez, S. Calero, A. R. Ruiz-Salvador, and S. Hamad, “Thermostructural Characterization of Silicon Carbide Nanocomposite Materials via Molecular Dynamics Simulations,” Advanced Composite Materials. 2021. link Times cited: 1 Abstract: In this paper, we investigate the thermostructural propertie… read more NOT USED (high confidence) M. K. Patankar et al., “Observation of local vibrational modes in N-doped 6H-SiC,” Indian Journal of Physics. 2021. link Times cited: 1 NOT USED (high confidence) P. Gao, J. Xin, X.-C. Liu, Y. Zheng, and E.-wei Shi, “Control of 4H polytype of SiC crystals by moving up the crucible to adjust the temperature field of the growth interface,” CrystEngComm. 2019. link Times cited: 7 Abstract: It is difficult to control the 4H polytype in the growth of … read more NOT USED (high confidence) Y. H. Kim, Y. W. Kim, and K. Kim, “Electrically conductive SiC ceramics processed by pressureless sintering,” International Journal of Applied Ceramic Technology. 2018. link Times cited: 25 |
Funding | Not available |
Short KIM ID
The unique KIM identifier code.
| MO_477506997611_002 |
Extended KIM ID
The long form of the KIM ID including a human readable prefix (100 characters max), two underscores, and the Short KIM ID. Extended KIM IDs can only contain alpha-numeric characters (letters and digits) and underscores and must begin with a letter.
| MEAM_LAMMPS_KangEunJun_2014_SiC__MO_477506997611_002 |
DOI |
10.25950/9a23357a https://doi.org/10.25950/9a23357a https://commons.datacite.org/doi.org/10.25950/9a23357a |
KIM Item Type
Specifies whether this is a Portable Model (software implementation of an interatomic model); Portable Model with parameter file (parameter file to be read in by a Model Driver); Model Driver (software implementation of an interatomic model that reads in parameters).
| Portable Model using Model Driver MEAM_LAMMPS__MD_249792265679_002 |
Driver | MEAM_LAMMPS__MD_249792265679_002 |
KIM API Version | 2.2 |
Potential Type | meam |
Previous Version | MEAM_LAMMPS_KangEunJun_2014_SiC__MO_477506997611_001 |
Grade | Name | Category | Brief Description | Full Results | Aux File(s) |
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P | vc-species-supported-as-stated | mandatory | The model supports all species it claims to support; see full description. |
Results | Files |
P | vc-periodicity-support | mandatory | Periodic boundary conditions are handled correctly; see full description. |
Results | Files |
P | vc-permutation-symmetry | mandatory | Total energy and forces are unchanged when swapping atoms of the same species; see full description. |
Results | Files |
A | vc-forces-numerical-derivative | consistency | Forces computed by the model agree with numerical derivatives of the energy; see full description. |
Results | Files |
N/A | vc-dimer-continuity-c1 | informational | The energy versus separation relation of a pair of atoms is C1 continuous (i.e. the function and its first derivative are continuous); see full description. |
Results | Files |
P | vc-objectivity | informational | Total energy is unchanged and forces transform correctly under rigid-body translation and rotation; see full description. |
Results | Files |
P | vc-inversion-symmetry | informational | Total energy is unchanged and forces change sign when inverting a configuration through the origin; see full description. |
Results | Files |
P | vc-memory-leak | informational | The model code does not have memory leaks (i.e. it releases all allocated memory at the end); see full description. |
Results | Files |
P | vc-thread-safe | mandatory | The model returns the same energy and forces when computed in serial and when using parallel threads for a set of configurations. Note that this is not a guarantee of thread safety; see full description. |
Results | Files |
P | vc-unit-conversion | mandatory | The model is able to correctly convert its energy and/or forces to different unit sets; see full description. |
Results | Files |
This bar chart plot shows the mono-atomic body-centered cubic (bcc) lattice constant predicted by the current model (shown in the unique color) compared with the predictions for all other models in the OpenKIM Repository that support the species. The vertical bars show the average and standard deviation (one sigma) bounds for all model predictions. Graphs are generated for each species supported by the model.
This graph shows the cohesive energy versus volume-per-atom for the current mode for four mono-atomic cubic phases (body-centered cubic (bcc), face-centered cubic (fcc), simple cubic (sc), and diamond). The curve with the lowest minimum is the ground state of the crystal if stable. (The crystal structure is enforced in these calculations, so the phase may not be stable.) Graphs are generated for each species supported by the model.
This bar chart plot shows the mono-atomic face-centered diamond lattice constant predicted by the current model (shown in the unique color) compared with the predictions for all other models in the OpenKIM Repository that support the species. The vertical bars show the average and standard deviation (one sigma) bounds for all model predictions. Graphs are generated for each species supported by the model.
This graph shows the dislocation core energy of a cubic crystal at zero temperature and pressure for a specific set of dislocation core cutoff radii. After obtaining the total energy of the system from conjugate gradient minimizations, non-singular, isotropic and anisotropic elasticity are applied to obtain the dislocation core energy for each of these supercells with different dipole distances. Graphs are generated for each species supported by the model.
(No matching species)This bar chart plot shows the mono-atomic face-centered cubic (fcc) elastic constants predicted by the current model (shown in blue) compared with the predictions for all other models in the OpenKIM Repository that support the species. The vertical bars show the average and standard deviation (one sigma) bounds for all model predictions. Graphs are generated for each species supported by the model.
This bar chart plot shows the mono-atomic face-centered cubic (fcc) lattice constant predicted by the current model (shown in red) compared with the predictions for all other models in the OpenKIM Repository that support the species. The vertical bars show the average and standard deviation (one sigma) bounds for all model predictions. Graphs are generated for each species supported by the model.
This bar chart plot shows the intrinsic and extrinsic stacking fault energies as well as the unstable stacking and unstable twinning energies for face-centered cubic (fcc) predicted by the current model (shown in blue) compared with the predictions for all other models in the OpenKIM Repository that support the species. The vertical bars show the average and standard deviation (one sigma) bounds for all model predictions. Graphs are generated for each species supported by the model.
(No matching species)This bar chart plot shows the mono-atomic face-centered cubic (fcc) relaxed surface energies predicted by the current model (shown in blue) compared with the predictions for all other models in the OpenKIM Repository that support the species. The vertical bars show the average and standard deviation (one sigma) bounds for all model predictions. Graphs are generated for each species supported by the model.
(No matching species)This bar chart plot shows the mono-atomic simple cubic (sc) lattice constant predicted by the current model (shown in the unique color) compared with the predictions for all other models in the OpenKIM Repository that support the species. The vertical bars show the average and standard deviation (one sigma) bounds for all model predictions. Graphs are generated for each species supported by the model.
Test | Test Results | Link to Test Results page | Benchmark time
Usertime multiplied by the Whetstone Benchmark. This number can be used (approximately) to compare the performance of different models independently of the architecture on which the test was run.
Measured in Millions of Whetstone Instructions (MWI) |
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Cohesive energy versus lattice constant curve for bcc C v004 | view | 4456 | |
Cohesive energy versus lattice constant curve for bcc Si v004 | view | 3998 | |
Cohesive energy versus lattice constant curve for diamond C v004 | view | 4859 | |
Cohesive energy versus lattice constant curve for diamond Si v004 | view | 4491 | |
Cohesive energy versus lattice constant curve for fcc C v004 | view | 4565 | |
Cohesive energy versus lattice constant curve for fcc Si v004 | view | 4028 | |
Cohesive energy versus lattice constant curve for sc C v004 | view | 4346 | |
Cohesive energy versus lattice constant curve for sc Si v004 | view | 4270 |
Test | Test Results | Link to Test Results page | Benchmark time
Usertime multiplied by the Whetstone Benchmark. This number can be used (approximately) to compare the performance of different models independently of the architecture on which the test was run.
Measured in Millions of Whetstone Instructions (MWI) |
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Elastic constants for CSi in AFLOW crystal prototype A2B_cP12_205_c_a at zero temperature and pressure v000 | view | 215561 |
Test | Test Results | Link to Test Results page | Benchmark time
Usertime multiplied by the Whetstone Benchmark. This number can be used (approximately) to compare the performance of different models independently of the architecture on which the test was run.
Measured in Millions of Whetstone Instructions (MWI) |
---|---|---|---|
Elastic constants for bcc C at zero temperature v006 | view | 28123 | |
Elastic constants for bcc Si at zero temperature v006 | view | 32172 | |
Elastic constants for diamond C at zero temperature v001 | view | 28049 | |
Elastic constants for diamond Si at zero temperature v001 | view | 24487 | |
Elastic constants for fcc C at zero temperature v006 | view | 9865 | |
Elastic constants for fcc Si at zero temperature v006 | view | 30921 | |
Elastic constants for sc C at zero temperature v006 | view | 18479 | |
Elastic constants for sc Si at zero temperature v006 | view | 9055 |
Test | Test Results | Link to Test Results page | Benchmark time
Usertime multiplied by the Whetstone Benchmark. This number can be used (approximately) to compare the performance of different models independently of the architecture on which the test was run.
Measured in Millions of Whetstone Instructions (MWI) |
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Cohesive energy and equilibrium lattice constant of graphene v002 | view | 786 |
Test | Test Results | Link to Test Results page | Benchmark time
Usertime multiplied by the Whetstone Benchmark. This number can be used (approximately) to compare the performance of different models independently of the architecture on which the test was run.
Measured in Millions of Whetstone Instructions (MWI) |
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Equilibrium zero-temperature lattice constant for bcc C v007 | view | 9339 | |
Equilibrium zero-temperature lattice constant for bcc Si v007 | view | 9419 | |
Equilibrium zero-temperature lattice constant for diamond C v007 | view | 9747 | |
Equilibrium zero-temperature lattice constant for diamond Si v007 | view | 8393 | |
Equilibrium zero-temperature lattice constant for fcc C v007 | view | 9429 | |
Equilibrium zero-temperature lattice constant for fcc Si v007 | view | 8822 | |
Equilibrium zero-temperature lattice constant for sc C v007 | view | 9429 | |
Equilibrium zero-temperature lattice constant for sc Si v007 | view | 9359 |
Test | Test Results | Link to Test Results page | Benchmark time
Usertime multiplied by the Whetstone Benchmark. This number can be used (approximately) to compare the performance of different models independently of the architecture on which the test was run.
Measured in Millions of Whetstone Instructions (MWI) |
---|---|---|---|
Equilibrium lattice constants for hcp C v005 | view | 83486 | |
Equilibrium lattice constants for hcp Si v005 | view | 68099 |
Test | Test Results | Link to Test Results page | Benchmark time
Usertime multiplied by the Whetstone Benchmark. This number can be used (approximately) to compare the performance of different models independently of the architecture on which the test was run.
Measured in Millions of Whetstone Instructions (MWI) |
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Linear thermal expansion coefficient of diamond C at 293.15 K under a pressure of 0 MPa v002 | view | 16364187 | |
Linear thermal expansion coefficient of diamond Si at 293.15 K under a pressure of 0 MPa v002 | view | 1485809 |
Test | Test Results | Link to Test Results page | Benchmark time
Usertime multiplied by the Whetstone Benchmark. This number can be used (approximately) to compare the performance of different models independently of the architecture on which the test was run.
Measured in Millions of Whetstone Instructions (MWI) |
---|---|---|---|
Monovacancy formation energy and relaxation volume for diamond Si | view | 508497 |
Test | Test Results | Link to Test Results page | Benchmark time
Usertime multiplied by the Whetstone Benchmark. This number can be used (approximately) to compare the performance of different models independently of the architecture on which the test was run.
Measured in Millions of Whetstone Instructions (MWI) |
---|---|---|---|
Vacancy formation and migration energy for diamond Si | view | 4149325 |
Test | Error Categories | Link to Error page |
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Elastic constants for hcp C at zero temperature v004 | other | view |
Elastic constants for hcp Si at zero temperature v004 | other | view |
Test | Error Categories | Link to Error page |
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Equilibrium crystal structure and energy for Si in AFLOW crystal prototype A_hR8_148_cf v002 | other | view |
Verification Check | Error Categories | Link to Error page |
---|---|---|
DimerContinuityC1__VC_303890932454_005 | other | view |
MEAM_LAMMPS_KangEunJun_2014_SiC__MO_477506997611_002.txz | Tar+XZ | Linux and OS X archive |
MEAM_LAMMPS_KangEunJun_2014_SiC__MO_477506997611_002.zip | Zip | Windows archive |
This Model requires a Model Driver. Archives for the Model Driver MEAM_LAMMPS__MD_249792265679_002 appear below.
MEAM_LAMMPS__MD_249792265679_002.txz | Tar+XZ | Linux and OS X archive |
MEAM_LAMMPS__MD_249792265679_002.zip | Zip | Windows archive |