Abstract: Exciton-phonon coupling (EXPC) plays a key role in the optoelectronic properties of semiconductor nanocrystals (NCs), but a microscopic picture of EXPC is still lacking, particularly regarding the magnitude and scaling with NC size, the dependence on phonon frequency, and the role of the NC surface. The computational complexity associated with accurately describing excitons and phonons has limited previous theoretical studies of EXPC to small NCs, noninteracting electron-hole models, and/or a small number of phonon modes. Here, we develop an atomistic approach for describing EXPC in NCs of experimentally relevant sizes. We validate our approach by calculating the reorganization energies, a measure of EXPC, for CdSe and CdSe-CdS core-shell NCs, finding good agreement with experimental measurements. We demonstrate that exciton formation distorts the NC lattice primarily along the coordinates of low-frequency acoustic modes. Modes at the NC surface play a significant role in smaller NCs while interior modes dominate for larger systems. read less

Abstract: In this study, core structure dependent dislocation dynamics of a-type edge dislocation in three slip systems (basal, prismatic and pyramidal) of wurtzite GaN have been investigated using classical molecular dynamics simulations. All potential a-type edge dislocation cores in the shuffle and glide planes of the three slip systems have been identified, and the corresponding dislocation dynamics were examined. Our calculations reveal that for all of the three slip systems, all of the shuffle cores are planar glissile and mobile, while being non-planar sessile and immobile for all of the glide cores. We further show that vacancy can be used to activate the motion of glide cores via core transition from glide to shuffle, which is also valid for AlN and InN. The critical shear stresses for the motion of glide cores are also determined at various vacancy concentrations. Our study clarifies core structure dependent dislocation dynamics characteristics and provides ways in tuning dislocation motions in wurtzite crystals. read less

Abstract: Two-dimensional molybdenum disulfide (MoS2) is a promising material for the next generation of switchable transistors and photodetectors. In order to perform large-scale molecular simulations of the mechanical and thermal behavior of MoS2-based devices, an accurate interatomic potential is required. To this end, we have developed a Stillinger-Weber potential for monolayer MoS2. The potential parameters are optimized to reproduce the geometry (bond lengths and bond angles) of MoS2 in its equilibrium state and to match as closely as possible the forces acting on the atoms along a dynamical trajectory obtained from ab initio molecular dynamics. Verification calculations indicate that the new potential accurately predicts important material properties including the strain dependence of the cohesive energy, the elastic constants, and the linear thermal expansion coefficient. The uncertainty in the potential parameters is determined using a Fisher information theory analysis. It is found that the parameters are... read less

Abstract: A Stillinger-Weber potential is computationally very efficient for molecular dynamics simulations. Despite its simple mathematical form, the Stillinger-Weber potential can be easily parameterized to ensure that crystal structures with tetrahedral bond angles (e.g., diamond-cubic, zinc-blende, and wurtzite) are stable and have the lowest energy. As a result, the Stillinger-Weber potential has been widely used to study a variety of semiconductor elements and alloys. When studying an A-B binary system, however, the Stillinger-Weber potential is associated with two major drawbacks. First, it significantly overestimates the elastic constants of elements A and B, limiting its use for systems involving both compounds and elements (e.g., an A/AB multilayer). Second, it prescribes equal energy for zinc-blende and wurtzite crystals, limiting its use for compounds with large stacking fault energies. Here, we utilize the polymorphic potential style recently implemented in LAMMPS to develop a modified Stillinger-Weber potential for InGaN that overcomes these two problems.A Stillinger-Weber potential is computationally very efficient for molecular dynamics simulations. Despite its simple mathematical form, the Stillinger-Weber potential can be easily parameterized to ensure that crystal structures with tetrahedral bond angles (e.g., diamond-cubic, zinc-blende, and wurtzite) are stable and have the lowest energy. As a result, the Stillinger-Weber potential has been widely used to study a variety of semiconductor elements and alloys. When studying an A-B binary system, however, the Stillinger-Weber potential is associated with two major drawbacks. First, it significantly overestimates the elastic constants of elements A and B, limiting its use for systems involving both compounds and elements (e.g., an A/AB multilayer). Second, it prescribes equal energy for zinc-blende and wurtzite crystals, limiting its use for compounds with large stacking fault energies. Here, we utilize the polymorphic potential style recently implemented in LAMMPS to develop a modified Stillinger-Weber... read less

Abstract: Machine-learning interatomic potential (MLIP) has been of growing interest as a useful method to describe the energetics of systems of interest. In the present study, we examine the accuracy of linearized pairwise MLIPs and angular-dependent MLIPs for 31 elemental metals. Using all of the optimal MLIPs for 31 elemental metals, we show the robustness of the linearized frameworks, the general trend of the predictive power of MLIPs, and the limitation of pairwise MLIPs. As a result, we obtain accurate MLIPs for all 31 elements using the same linearized framework. This indicates that the use of numerous descriptors is the most important practical feature for constructing MLIPs with high accuracy. An accurate MLIP can be constructed using only pairwise descriptors for most non-transition metals, whereas it is very important to consider angular-dependent descriptors when expressing interatomic interactions of transition metals. read less

Abstract: Reducing defects in InGaN films deposited on GaN substrates has been critical to fill the “green” gap for solid-state lighting applications. To enable researchers to use molecular dynamics vapor deposition simulations to explores ways to reduce defects in InGaN films, we have developed and characterized a Stillinger-Weber potential for InGaN. We show that this potential reproduces the experimental atomic volume, cohesive energy, and bulk modulus of the equilibrium wurtzite / zinc-blende phases of both InN and GaN. Most importantly, the potential captures the stability of the correct phase of InGaN compounds against a variety of other elemental, alloy, and compound configurations. This is validated by the potential’s ability to predict crystalline growth of stoichiometric wurtzite and zinc-blende InxGa1-xN compounds during vapor deposition simulations where adatoms are randomly injected to the growth surface. read less

Abstract: Analytical expressions for the stress and elasticity tensors of materials, in which the interactions are described by the Stillinger–Weber potential, are derived in the context of the stress fluctuation formalism. The derived formulas can be used both in Monte Carlo and molecular dynamics simulations. As an example of possible applications, they are employed to calculate the influence of the temperature and system size on the mechanical properties of crystalline cubic boron nitride. The system has been studied by molecular dynamics simulations. The computed mechanical properties are in good agreement with available experimental data and first principle calculations. In the studied crystalline cubic boron nitride system, the employed formalism is of higher accuracy than the ‘small-strain’ non-equilibrium method. The dominant contributions to the elastic constants stem from the Born and stress fluctuation terms. An increase in the system size reduces the statistical uncertainties in the computation of the mechanical properties. A rise of the temperature leads to a slight increase in the observed uncertainties. The derived expressions for the stress and elasticity tensors are further decomposed into sums of atomic level stress and atomic level elasticity tensors. The developed factorization enables us (i) to quantify the contribution of the various chemical groups, in the case under consideration of the different atoms, to the observed mechanical properties and (ii) to determine the elastic constants with reduced computational uncertainties. The reason is that the exact values of some terms of the proposed factorization can be determined theoretically beforehand. Thus, they can be substituted in the derived formulas leading to an enhanced convergence. read less

Abstract: We study the chemical ordering in Bi2Te3−xSex grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x  =  0 to 3, and determine their material properties using energy dispersive x-ray spectroscopy, x-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent description of growth at a microscopic level. Our main finding is that despite the incorporation of Se in the central layer being much more probable than that of Te, the formation of a fully ordered Te–Bi–Se–Bi–Te layer is prevented by kinetic of the growth process. Indeed, the Se concentration in the central layer of Bi2Te2Se1 reaches a maximum of only  ≈75% even under ideal growth conditions. A second finding of our work is that the intensity ratio of the 0 0 12 and 0 0 6 x-ray reflections serves as an experimentally accessible quantitative measure of the degree of ordering in these films. read less

Abstract: The aim of the study described in this thesis is to obtain a profound understanding of transformations in NCs at the atomic level, by performing molecular simulations for such transformations, and by comparing the simulation results with available experimental high resolution transmission electron microscopy (HRTEM) data to validate the simulations and to reveal underlying physical mechanisms. These transformations include structural and morphological transitions and cation exchange processes in ionic nanocrystals (II-VI and IV-VI semiconductors). The main simulation method used is classical Molecular Dynamics (MD) simulation. First principles density functional theory (DFT) calculations were used to develop empirical force fields that are able to accurately reproduce phase transitions. Using these newly developed force fields, large scaled classical MD simulations were carried out and linked to HRTEM experiments. The partially charged rigid ion model (PCRIM) was chosen for the force fields. This PCRIM approach has a simple functional form with a few number of parameters and has a clear physical meaning for ionic crystals. To simulate cation exchange in colloidal NC systems at the NC/solution interface, we used a combination of all-atom force fields and a coarse-grained model. In Chapter 2, an ab-initio based force field for ZnO is developed within the framework of the PCRIM approach. The values of the partial charges were determined by Bader charge analysis of DFT calculations on various ZnO phases. Beside Coulombic interactions, only short-ranged pairwise interatomic interactions were included. An initial guess of the parameters of the short-ranged pair potentials were first obtained by the lattice inversion method. The parameters were further adjusted by an ab-initio potential surface fitting procedure. The new ZnO force field has a very simple functional form is able to accurately reproduce several important physical properties of ZnO materials. These physical properties include the lattice parameters and phase stability of several ZnO polymorphs, as well as the elastic constants, bulk moduli, phonon dispersion, and melting points of wurtzite ZnO. The transition pressure of the wurtzite-to-rocksalt transition calculated with the force field equals 12.3 GPa, in agreement with experimental measurements and DFT calculations. A wurtzite-to-honeycomb phase transition is predicted at an uniaxial pressure of 8.8 GPa. We found a rational and effective way to derive force fields with simple functional forms for accurate simulations of phase transitions in ionic crystals. In Chapter 3, we developed a transferable force field for CdS-CdSe-PbSPbSe solid systems. The selection of the force field and the fitting procedure are similar to that of the ZnO force field in Chapter 2. The challenges when developing this force field were to maintain the transferability of this force field for four materials (CdS, CdSe, PbS, and PbSe) and to describe their mixed phases. This was solved by assuming that different cations/anions have the same values of the partial charges, and that shortranged interatomic interactions between two cations/anions are the same in different materials. For the mixed phases, DFT calculations of the mixed phases were included in both the training and validation sets. This work is the first step for further simulation studies of these II-VI and IV-VI semiconductor NCs and heteronanocrystals (HNCs). In Chapter 4, a thermally induced morphological and structural transition of CdSe NCs was investigated using MD simulations. In MD simulations, a CdSe nanosphere with the ZB structure transforms into a tetrapodlike morphology at 800 K. In a CdSe tetrapod, four WZ legs attach to the {111} facets of a tetrahedral ZB core. This transformation is achieved by a layer-by-layer slip of the ZB-{111} bilayer. Simulations show that the slips are mediated by the formation of Cd vacancies on the surface of the NCs to overcome the potentially large energy barriers associated with slip. The morphology of the annealed NCs is found to be temperature and size-dependent. An octapod-like morphology is found in NCs with a relatively large NC size and in a certain range of the heating temperature. Surprisingly, nanoscale transformations of CdSe NCs have been directly observed in HRTEM in situ heating experiments. Our findings provide a simple method to modify the morphology of ionic NCs and can potentially be used in the synthesis of branched NCs. The cation exchange process of PbSe/CdSe HNCs has been investigated by HRTEM in situ heating experiments in combination with MD simulations and DFT calculations in Chapter 5. In the HRTEM experiments, we bserved that Cd atoms in PbSe/CdSe nanodumbbells (CdSe rods with one or two PbSe tip(s)) are replaced by Pb atoms. The exchange rate depends on the heating temperature and the amount of Pb atoms present in the system. Sometimes, fully converted PbSe nanodumbells can be observed. MD simulations were performed to investigate the mechanism of this cation exchange process. It was found that the the CdSe domains near the PbSe/CdSe interfaces have significant structural disorder. These findings are in line with the experimental observation that the exchange process proceeds in a layer-by-layer fashion along the WZ- direction. We concluded that cation exchange in PbSe/CdSe HNCs is mediated by the local structural disorder which enables the formation of vacancies and accelerated the motion of cations. In Chapter 6, a coarse-grained psuedoligand model was introduced to simulate cation exchange in PbS colloidal NCs taking into account the cation-solvent interactions. Modelling colloidal NC systems including interactions with the solvent has long been a challenge due to the large system size and long time scales. Here, we incorporated the effects of ligands and solvents into negatively charged large spherical coarse-grained psuedoligands. MD simulations combining coarse-grained and all-atom models can successfully reproduce the cation exchange process in PbS colloidal NCs. Simulations show that the exchange rate and system equilibrium can be controlled by the temperature and by changing ligands. The exchange process is directly related to vacancy formation and the high mobility of Cd ions at the PbS/CdS interface. Our simulations also predict that high-pressure conditions will be beneficial for achieving fast exchange at elevated temperatures. Our coarse-grained model can be easily extended to other systems for the computational investigation of transformations in nanostructures. read less

Abstract: We report on the thermodynamic properties of binary compound mixtures of model groups II–VI semiconductors. We use the recently introduced Stillinger–Weber Hamiltonian to model binary mixtures of CdTe and CdSe. We use molecular dynamics simulations to calculate the volume and enthalpy of mixing as a function of mole fraction. The lattice parameter of the mixture closely follows Vegard's law: a linear relation. This implies that the excess volume is a cubic function of mole fraction. A connection is made with hard sphere models of mixed fcc and zincblende structures. The potential energy exhibits a positive deviation from ideal soluton behaviour; the excess enthalpy is nearly independent of temperatures studied (300 and 533 K) and is well described by a simple cubic function of the mole fraction. Using a regular solution approach (combining non-ideal behaviour for the enthalpy with ideal solution behaviour for the entropy of mixing), we arrive at the Gibbs free energy of the mixture. The Gibbs free energy results indicate that the CdTe and CdSe mixtures exhibit phase separation. The upper consolute temperature is found to be 335 K. Finally, we provide the surface energy as a function of composition. It roughly follows ideal solution theory, but with a negative deviation (negative excess surface energy). This indicates that alloying increases the stability, even for nano-particles. read less

Abstract: A Stillinger-Weber interatomic potential is parameterized for phosphorene. It well reproduces the crystal structure, cohesive energy and phonon dispersion predicted by first-principles calculations. The thermal conductivity of phosphorene is further explored by equilibrium molecular dynamics simulations adopting the optimal set of potential parameters. At room temperature, the intrinsic thermal conductivities along zigzag and armchair directions are about 152.7 and 33.0 W/mK, respectively, with a large anisotropy ratio of five. The remarkably directional dependence of thermal conductivity in phosphorene, consistent with previous reports, is mainly due to the strong anisotropy of phonon group velocities, and weak anisotropy of phonon lifetimes as revealed by lattice dynamics calculations. Moreover, the effective phonon mean free paths at zigzag and armchair directions are about 141.4 and 43.4nm, respectively. read less

Abstract: High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering. read less

Abstract: Cd1-xZnxTe/CdS solar cells are currently limited by material defects. While nano-structuring promises further defect reductions, the materials synthesis and characterization become more challenging. Molecular dynamics models capable of growth simulations enable defects to be explored without assumptions, and can therefore guide nanoscale experiments. Such models are difficult to develop, and are not routinely available in literature for semiconductor compounds. To fill this gap, we have developed growth simulation enabling Stillinger-Weber and bond-order potentials. These new models begin to enable molecular dynamics to be used to explore nano-structured Cd1-xZnxTe/CdS solar cells with reduced defects. read less

Abstract: We introduce a new ab initio derived reactive potential for the simulation of CdTe within density functional theory (DFT) and apply it to calculate both static and dynamical properties of a number of systems (bulk solid, defective structures, liquid, surfaces) at finite temperature. In particular, we also consider cases with low sulfur concentration (CdTe:S). The analysis of DFT and classical molecular dynamics (MD) simulations performed with the same protocol leads to stringent performance tests and to a detailed comparison of the two schemes. Metadynamics techniques are used to empower both Car-Parrinello and classical molecular dynamics for the simulation of activated processes. For the latter, we consider surface reconstruction and sulfur diffusion in the bulk. The same procedures are applied using previously proposed force fields for CdTe and CdTeS materials, thus allowing for a detailed comparison of the various schemes. read less

Abstract: Pressure overcomes balanced particle interactions and enables fine-tuning of nanoparticle lattice, forming new luminescent nanowires. Oriented attachment (OA) of synthetic nanocrystals is emerging as an effective means of fabricating low-dimensional nanoscale materials. However, OA relies on energetically favorable nanocrystal facets to grow nanostructured materials. Consequently, nanostructures synthesized through OA are generally limited to a specific crystal facet in their final morphology. We report our discovery that high-pressure compression can induce consolidation of spherical CdSe nanocrystal arrays, leading to unexpected one-dimensional semiconductor nanowires that do not exhibit the typical crystal facet. In particular, in situ high-pressure synchrotron x-ray scattering, optical spectroscopy, and high-resolution transmission electron microscopy characterizations indicate that by manipulating the coupling between nanocrystals through external pressure, a reversible change in nanocrystal assemblies and properties can be achieved at modest pressure. When pressure is increased above a threshold, these nanocrystals begin to contact one another and consolidate, irreversibly forming one-dimensional luminescent nanowires. High-fidelity molecular dynamics (MD) methods were used to calculate surface energies and simulate compression and coalescence mechanisms of CdSe nanocrystals. The MD results provide new insight into nanowire assembly dynamics and phase stability of nanocrystalline structures. read less

Abstract: A transferable force field for the PbSe-CdSe solid system using the partially charged rigid ion model has been successfully developed and was used to study the cation exchange in PbSe-CdSe heteronanocrystals [A. O. Yalcin et al., "Atomic resolution monitoring of cation exchange in CdSe-PbSe heteronanocrystals during epitaxial solid-solid-vapor growth," Nano Lett. 14, 3661-3667 (2014)]. In this work, we extend this force field by including another two important binary semiconductors, PbS and CdS, and provide detailed information on the validation of this force field. The parameterization combines Bader charge analysis, empirical fitting, and ab initio energy surface fitting. When compared with experimental data and density functional theory calculations, it is shown that a wide range of physical properties of bulk PbS, PbSe, CdS, CdSe, and their mixed phases can be accurately reproduced using this force field. The choice of functional forms and parameterization strategy is demonstrated to be rational and effective. This transferable force field can be used in various studies on II-VI and IV-VI semiconductor materials consisting of CdS, CdSe, PbS, and PbSe. Here, we demonstrate the applicability of the force field model by molecular dynamics simulations whereby transformations are initiated by cation exchange. read less