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TriclinicPBCEnergyAndForces_bcc_2atom_Si__TE_310416606864_000

Title
A single sentence description.
Potential energy and atomic forces of periodic, non-orthogonal cell of silicon atoms in a perturbed bcc structure
Description This test computes the potential energy and forces of a periodic triclinic box of silicon atoms. The box dimensions and atomic positions were obtained by perturbing a conventional bcc unit cell at a lattice constant of 3.088 Angstroms (equilibrium LDA-DFT value quoted in H. Balamane, T. Halicioglu, and W. Tiller, Phys. Rev. B 46, 2250 (1992).). Each atomic position was perturbed in a random direction with a magnitude of displacement no greater than 0.5 Angstroms. Each of the three supercell vectors was also perturbed randomly with a magnitude of displacement no greater than 0.5 Angstroms.
Species
The supported atomic species.
Si
Disclaimer
A statement of applicability provided by the contributor, informing users of the intended use of this KIM Item.
See the test driver source (TriclinicPBCEnergyAndForces__TD_892847239811_000) for required formatting of extended xyz file. This kimspec file was generated automatically using the openkim-pipeline `testgenie` utility along with the template files in the test driver directory.
Contributor Daniel S. Karls
Maintainer Daniel S. Karls
Published on KIM 2014
How to Cite Click here to download this citation in BibTeX format.
Funding Not available
Short KIM ID
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TE_310416606864_000
Extended KIM ID
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TriclinicPBCEnergyAndForces_bcc_2atom_Si__TE_310416606864_000
Citable Link https://openkim.org/cite/TE_310416606864_000
KIM Item TypeTest
DriverTriclinicPBCEnergyAndForces__TD_892847239811_000
Properties
Properties as defined in kimspec.edn. These properties are inhereted from the Test Driver.
KIM API Version1.5
Programming Language(s)
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100.00% Python


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Parameters for the ‘new’ potential

This parameterization is optimized for tetrahedral structures of silicon (referred to in the paper as the ‘new’ potential in contrast to an ‘old’ version published two years earlier more suitable for high-pressure phases of silicon. The parameters for the ‘old’ potential were by fitting the model to structural energies calculated using density functional theory within the local-density approximation (LDA). The method used for determining the parameters for the ‘new’ potential is not mentioned explicitly, so we presume that the authors followed the same framework for both of their models. The influence distance parameter \(D\) is not reported originally by the authors, here we use a value of 6 angstroms for reasons of speedup. Also the values of parameters \(B_1\) and \(B_2\) reported in the original article correspond to half of the values given below. This is because in our model, the summation of three-body potential term is implemented more efficiently in an asymmetric manner, while Biswas and Hamann assumed a symmetric form for the three-body potential in their original article.

Table of parameters

Parameter                        Value                   Units
\(A_1\) \(142.2922\) \(eV\)
\(A_2\) \(-107.0338\) \(eV\)
\(B_1\) \(26.0598\) \(eV\)
\(B_2\) \(1.3441478\) \(eV\)
\(\lambda_1\) \(0.5200836\) \(\overset{\circ}{A}^{-2}\)
\(\lambda_2\) \(0.4206931\) \(\overset{\circ}{A}^{-2}\)
\(\alpha_1\) \(0.3034373\) \(\overset{\circ}{A}^{-2}\)
\(\alpha_2\) \(0.3191903\) \(\overset{\circ}{A}^{-2}\)
\(r_c\) \(3.9527357\) \(\overset{\circ}{A}\)
\(\mu\) \(0.3120580\) \(\overset{\circ}{A}\)
\(D\) \(6.0\) \(\overset{\circ}{A}\)

Representative plots

A plot from the original article depicting the angular variation of the three-body potential for the new classical Si model is shown. The bond lengths were set equal to 2.35 angstroms, which is the equilibrium bond length of Si.


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